Nano letters 2010, 10:4279–4283.A-1210477 price CrossRef 4. Srivastava SK, Kumara D, Singh PK, Kar M, Kumar V, Husain M: Properties of vertical silicon nanowire arrays.
Sol Energ Mat Sol Cells 2010, 94:1506–1511.CrossRef 5. Peng KQ, Lee ST: Silicon nanowires for photovoltaic solar energy conversion. Adv Mater 2011, 23:198–215.CrossRef 6. Peng KQ, Wang X, Li L, Hu Y, Lee ST: Silicon nanowires for advanced energy conversion and storage. Nano Today 2013, 8:75–97.CrossRef 7. Choi S, Goryll M, Sin LYM, Cordovez B: Microfluidic-based biosensors toward point-of-care detection of nucleic acids and proteins. IWR-1 Microfluid Nanofluid 2011, 10:231–247.CrossRef 8. Chen KI, Li BR, Chen YT: Silicon nanowire field-effect transistor-based biosensors for biomedical diagnosis and cellular recording investigation. Nano Today 2011, 6:131–154.CrossRef 9. Sunkara MK, Sharma S, Miranda R, Liana G, Dickey EC: Bulk synthesis of silicon nanowires using a low-temperature vapor–liquid–solid method. Appl Phys Lett 2001, 79:1546–1548.CrossRef 10. Ke Y, Weng X, Redwing JM, Eichfeld CM, Swisher TR, Mohney SE, Habib YM: Fabrication and electrical properties of Si nanowires synthesized
by Al catalyzed vapor–liquid − solid growth. Nano letters 2009, 9:4494–4499.CrossRef 11. Zhan JG, Liu J, Wang D, Choi D, Fifield LS, Wang C, Xia G, Nie Z, Yang Z, Pederson LR, Graff G: Vapor-induced solid–liquid–solid process for silicon-based nanowire growth. J Power Sources 2010, 195:1691–1697.CrossRef 12. Yan HF, Xing YJ, Hang QL, Yu DP, Wang YP, Xu J, Xi ZH, Feng SQ: Growth of amorphous silicon nanowires via a solid–liquid–solid mechanism. selleckchem Chem Phys Lett 2000, 323:224–228.CrossRef 13. Henry MD, Shearn MJ, Chhim B, Scherer A: Ga + beam lithography for nanoscale silicon reactive ion etching. Nanotechnology 2010,
21:245303.CrossRef 14. Li X, Bohn PW: Metal-assisted chemical etching in HF/H 2 O 2 produces porous silicon. Appl Phys Lett 2000, 77:2572–2574.CrossRef 15. Huang Z, Geyer N, Werner P, Boor J, Gösele U: Metal-assisted chemical etching of silicon: a review. Adv Mater 2011, 23:285–308.CrossRef 16. Qu Y, Liao L, Zhang LY, Huang HY, Duan X: Electrically conductive Org 27569 and optically active porous silicon nanowires. Nano letters 2009, 9:4539–4543.CrossRef 17. Scheeler SP, Ullrich S, Kudera S, Pacholski C: Fabrication of porous silicon by metal-assisted etching using highly ordered gold nanoparticle arrays. Nanoscale Res Lett 2012, 7:1–7.CrossRef 18. Peng K, Lu A, Zhang R, Lee ST: Motility of metal nanoparticles in silicon and induced anisotropic silicon etching. Adv Funct Mater 2008, 18:3026–3035.CrossRef 19. Peng KQ, Hu JJ, Yan YJ, Wu Y, Fang H, Xu Y, Lee ST, Zhu J: Fabrication of single-crystalline silicon nanowires by scratching a silicon surface with catalytic metal particles. Adv Funct Mater 2006, 16:387–394.CrossRef 20. Nahidi M, Kolasinski KW: Effects of stain etchant composition on the photoluminescence and morphology of porous silicon. J Electrochem Soc 2006, 153:C19-C26.CrossRef 21.